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| SHINDENGEN General Purpose Rectifiers SIL Bridges D3SBA20 200V 4A FEATURES *oehin Single In-Line Package T *oe High IFSM *oe Applicable to Automatic Insertion APPLICATION OUTLINE DIMENSIONS Case : 3S Unit : mm *oe power supply Switching *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 200 V IO Average Rectified Forward Current50Hz sine wave, R-load With heatsink Tc=108*Z 4 A 50Hz sine wave, R-load Without heatsink Ta=25*Z 2.3 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25*Z A 80 Current Squared Time I2t 1ms*...t*10ms*@Tj=25*Z A2 s 32 Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR * ecommended torque*0.5Nm*j R i F 0.8 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit VF I =2A, Pulse measurement, Rating of per diode Forward Voltage F Max.1.05 V IR V=V , Pulse measurement, Rating of per diode Max.10 EA Reverse Current R RM AEjc junction to case *@*@With heatsink Max.5.5 Thermal Resistance AEjl junction to lead *@ *@ Without heatsink Max.6 *Z/W AEja junction to ambient Without heatsink Max.30 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D3SBAx Forward Voltage 10 Forward Current IF [A] Tl=150C [TYP] Tl=25C [TYP] 1 Pulse measurement per diode 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Forward Voltage VF [V] D3SBAx 16 14 Forward Power Dissipation Forward Power Dissipation PF [W] SIN 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 Average Rectified Forward Current IO [A] Tj = 150C Sine wave D3SBAx 7 Derating Curve Heatsink Tc Tc Average Rectified Forward Current IO [A] 6 SIN 5 4 3 2 1 0 80 90 100 110 120 130 140 150 160 Case Temperature Tc [C] Sine wave R-load with heatsink D3SBAx 3.2 Derating Curve Average Rectified Forward Current IO [A] 2.8 PCB 2.4 2 1.6 1.2 0.8 0.4 0 SIN Glass-epoxy substrate Soldering land 5mm 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] Sine wave R-load Free in air D3SBAx 150 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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